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| Power Transistors www..com 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification Features * High collector-emitter voltage (Base open) VCEO * High transition frequency fT * TO-126B package which requires no insulation plate for installation to the heat sink 3.160.1 8.0+0.5 -0.1 Unit: mm 3.20.2 3.80.3 11.00.5 1.90.1 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 250 250 7 100 150 1.2 *1 4 Junction temperature Storage temperature *2 Unit V V V mA mA W C C 1 2 0.750.1 4.60.2 0.50.1 0.50.1 2.30.2 3 1.760.1 150 -55 to +150 Note) *1: Without heat sink *2 :With a 100 x 100 x 2 mm Al heat sink Electrical Characteristics Ta = 25C 3C Parameter Emitter-base voltage (Collector open) Base-emitter voltage Collector-emitter cutoff current (Resistor between B and E) Forward current transfer ratio Symbol VEBO VBE ICER hFE1 hFE2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob Conditions IE = 0.1 mA, IC = 0 VCE = 20 V, IC = 40 mA VCE = 250 V, RBE = 100 k VCE = 20 V, IC = 40 mA VCE = 50 V, IC = 5 mA IC = 50 mA, IB = 5 mA VCB = 10 V, IE = -10 mA, f = 200 MHz VCB = 50 V, IE = 0, f = 1 MHz 100 3.0 4.5 40 30 1.2 V MHz pF Min 7 1.2 100 Typ Max Unit V V A Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 16.01.0 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3.050.1 Publication date: January 2003 SJD00098BED 1 2SC2258 www..com 5 PC Ta 120 (1)With a 100x100x2mm Al heat sink (2)Without heat sink IC VCE 120 TC=25C 1.8mA IB=2.0mA IC VBE VCE=10V Collector power dissipation PC (W) 4 (1) 100 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 100 25C -25C TC=100C Collector current IC (mA) 80 Collector current IC (mA) 80 3 60 60 2 (2) 40 0.2mA 40 1 20 20 0 0 0 40 80 120 160 0 2 4 6 8 10 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) IC I B Collector-emitter saturation voltage VCE(sat) (V) 120 VCE=10V TC=25C VCE(sat) IC 100 IC/IB=10 IB VBE 3.0 VCE=10V TC=25C 100 2.5 10 Collector current IC (mA) 80 Base current IB (mA) 100 2.0 60 1 TC=100C 25C 1.5 40 1.0 0.1 -25C 20 0.5 0 0 0.4 0.8 1.2 1.6 2.0 0.01 0.1 1 10 0 0 0.2 0.4 0.6 0.8 1.0 Base current IB (mA) Collector current IC (A) Base-emitter voltage VBE (V) hFE IC 240 VCE=10V fT I E Collector output capacitance C (pF) (Common base, input open circuited) ob 160 VCB=10V f=200MHz TC=25C Cob VCB 10 IE=0 f=1MHz TC=25C Forward current transfer ratio hFE Transition frequency fT (MHz) 200 TC=100C 8 120 160 6 120 25C 80 4 80 -25C 40 40 2 0 0.01 0.1 1 10 0 -1 -10 -100 0 1 10 100 Collector current IC (mA) Emitter current IE (mA) Collector-base voltage VCB (V) 2 SJD00098BED www..com Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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